SUP50N03-5M1P-GE3 datasheet

О ДАТАШИТЕ

Маркировка

SUP50N03-5M1P-GE3
Производитель

Vishay Intertechnology
Описание

Vishay Intertechnology SUP50N03-5M1P-GE3 Configuration: Single Continuous Drain Current: 50 A Current - Continuous Drain (id) @ 25?° C: 50A Drain Source Voltage Vds: 30V Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 110 S Gate Charge (qg) @ Vgs: 66nC @ 10V ID_COMPONENTS: 2668389 Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: Through Hole On Resistance Rds(on): 4200?‚?µohm Operating Temperature Range: -55?‚?°C To +150?‚?°C Package / Case: TO-220-3 Power - Max: 2.7W Power Dissipation: 59.5 W Rds On (max) @ Id, Vgs: 5.1 mOhm @ 22A, 10V Rds(on) Test Voltage Vgs: 10V Resistance Drain-source Rds (on): 0.0042 Ohms Series: TrenchFET?® Transistor Polarity: N Channel Vgs(th) (max) @ Id: 2.5V @ 250?µA Voltage Vgs Max: 20V RoHS: yes Drain-Source Breakdown Voltage: 30 V Resistance Drain-Source RDS (on): 0.0042 Ohms Forward Transconductance gFS (Max / Min): 110 S Other Names: SUP50N03-5M1P-GE3TR
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